Avik Ghosh

At the Virginia Nano-Computing Research Group (http://www.ece.virginia.edu/vino/), our focus is on understanding non-equilibrium properties of nano-scale material structures for interesting applications. Our work applies a combined understanding of fundamental physics, chemistry, material science, and device engineering to explore novel device concepts. Our goal is to connect emerging materials with novel devices towards innovative circuit and architecture, using tools that go from 'first principles' models to quantum transport to compact models (DFT to Non Equilibrium Green's Functions to SPICE)

We also explore and utilize high performance computational resources including the use numerical algorithms to advance our understanding of nanoscale science and engineering. To address the challenges of extending today’s electronic devices to the next generation of devices, science can no longer work out of context to engineering, but rather both should work in tandem. The interdisciplinary nature of our approach is necessary to explain the science and push the engineering of future devices.

Topics of current interest include:

1. Quantum transport in strongly correlated systems

2. Beating the Boltzmann limit on switching with tunnel-transistors, relays, Klein tunnel switches and metal-insulator transitions

3. Unconventional electron flow in Dirac Cone systems (Graphene, Bilayer Graphene, Topological Insulators)

4. Nanomagnetic memory and logic (Spin Hall, Spin Torque, Multiferroics)

5. Materials discovery - Heusler magnets and thermoelectrics 

6. Nanoscale Thermal flow - phonon coherence, interfacial scattering and interface engineering

7. Electron flow in disordered solids for sensing, logic and photodetectors

8. Bio-inspired Neuronal Computing 

9. Spin based approximate and stochastic computing for beyond CMOS applications

A. Journal Papers

1. “On the wave and particle nature of phonons contributing to thermal transport in superlattices”, Ramez Cheaito, Sadhvikas Addamane, Carlos A. Polanco, Jingjie Zhang, Avik W. Ghosh, Ganesh Balakrishnan , and Patrick E. Hopkins, Submitted to PNAS, 2017
2. “Optimizing the interfacial thermal conductance at gold-alkane junctions from 'First Principles'”, Jingjie Zhang, Carlos A. Polanco, Avik W. Ghosh, arXiv Preprint, arXiv:1612.04807 (Submitted to JAP), 2016
3. “Effects of bulk and interfacial anharmonicity on thermal conductance at solid/solid interfaces”, Nam Q. Le, Carlos A. Polanco, Rouzbeh Rastgarkafshgarkolaei, Jingjie Zhang, Avik W. Ghosh, Pamela M. Norris, arXiv Preprint, arXiv:1610.01015 (Submitted to PRB), 2016
4. “Design rules for interfacial thermal conductance - building better bridges”, Carlos A. Polanco, Rouzbeh Rastgarkafshgarkolaei, Jingjie Zhang, Nam Le, Pamela M. Norris, Avik W. Ghosh, arXiv Preprint, arXiv:1608.05871 (Submitted to PRB), 2016
5. “Computational Investigation of Half-Heusler Compounds for Spintronics Applications”, Jianhua Ma, Vinay I. Hegde, Kamaram Munira, Yunkun Xie, Sahar Keshavarz, David T. Mildebrath, C. Wolverton, Avik W. Ghosh, W. H. Butler, PRB accepted (2016). Selected as Editor’s Highlight.
6. “First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding”, Y. Tan, F. Chen and A. W. Ghosh, Applied Physics Letters, vol. 109 :101601 , 2016
7.  “Fokker-Planck Study of Parameter Dependence on Write Error Slope in Spin-Torque Switching, Yunkun Xie, Behtash Behin-Aein, Avik W. Ghosh, IEEE Transactions on Electron Devices, vol. 64:1 , pp. 319-324, 2017
8.  “Electron optics with ballistic graphene junctions”, S. Chen, Z. Han, M. M. Elahi, K. M. Masum Habib, L. Wang, B. Wen, Y. Gao, T. Taniguchi, K. Watanabe, J. Hone, A. W. Ghosh and C. R. Dean, Science 353, 1522 (2016). Top-10 breakthrough of 2016, Physics World.
9. “Synthesis and characterization of Fe-Ti-Sb intermetallic compounds: discovery of a new Slater-Pauling phase”, N. Naghibolashrafi, S. Keshavarz, V. I. Hegde, A. Gupta, W. H. Butler, J. Romero, K. Munira, P. LeClair, D. Mazumdar, J. Ma, A. W. Ghosh and C. Wolverton, Phys. Rev. B 93, 104424 (2016).
10. “Modified Dirac Hamiltonian for Efficient Quantum Mechanical Simulations of Micron Sized Devices", M. Habib, R. Sajjad and A. W. Ghosh, Appl. Phys. Lett., 108, 113105 (2016).
11. “Steep Subthreshold Switching with Nanomechanical FET Relays”, D. Unluer and A. W. Ghosh, IEEE-TED 63, 1681 (2016).
12. “Anisotropy in layered half-metallic Heusler alloy superlattices”, J. G. Azdani, K. Munira, J. Romero, J. Ma, C. Sivakumar, A. W. Ghosh and W. H. Butler, J. Appl. Phys. 119, 043904 (2016).
13.  “Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene”, R. N. Sajjad, F. Tseng, M. Habib and A. W. Ghosh, Phys. Rev. B 92, 205408 (2015).
14. “Role of crystal structure and junction morphology on interface thermal conductance”, C. A. Polanco, R. Rastgarkafshgarkolaei, J. Zhang, N. Q. Le, P. M. Norris, P. E. Hopkins, and A. W. Ghosh, Phys. Rev. B 92, 144302 (2015).
15.  “Transmission engineering as a route to subthermal switching”, A. W. Ghosh, special issue on low subthreshold switching, IEEE JEDS 3, 135 (2015).
16. “Chiral tunneling of topological states for giant longitudinal spin Hall angle”, K. M. Masum Habib, R. N. Sajjad and A. W. Ghosh, Phys. Rev. Lett. 114, 176801 (2015).
17. “Reducing error rates in straintronic multiferroic dipole-coupled nanomagnetic logic by pulse shaping”, K. Munira, Y. Xie, S. Nadri, M. B. Forgues, M. S. Fashami, J. Atulasimha, S. Bandyopadhyay and A. W. Ghosh, Nanotechnology, 26, 245202 (2015).
18. “Enhancing Phonon Flow through 1D interfaces by impedance matching”, C. Polanco  and A. W. Ghosh, J. Appl. Phys. 116, 083503 (2014).
19. “Impedance matching of atomic thermal interfaces using primitive block decomposition,” C. Polanco, C. B. Saltonstall, P. M. Norris, P. E. Hopkins, and A.W. Ghosh, Nanoscale and Microscale Thermophysical Engineering, 17, 263-279 (2013).
20.  “Effect of interface adhesion and impurity mass on phonon transport at atomic junctions,” C. B. Saltonstall, C. Polanco, J. C. Duda, A. W. Ghosh, P. M. Norris, and P.E. Hopkins, Journal of Applied Physics 113, 013516, 8pps (2013).
21. “Manipulating chiral transmission with gate geometry: switching with graphene with transmission gaps”, R. Sajjad and A. W. Ghosh, ACS Nano 7, 9808, 6pps (2013),
22. “Switching of dipole coupled multiferroic nanomagnets in the presence of thermal noise: reliability analysis of hybrid spintronic-straintronic nanomagnetic logic”, S.  Fashami, K. Munira, S. Bandyopadhyay, A W Ghosh and J Atulasimha, IEEE TNano, 12, pp 1206-1212 (2013)
23. “Atomistic deconstruction of current flow in graphene based hetero-junctions”, R. N. Sajjad, C. Polanco and A. W. Ghosh, invited paper, Special Issue on graphene nanostructures, Ed. Branislav Nikolic, J. Comp. El, 12, 232- 247 (2013).
24. "Using room temperature current noise to characterize single molecular spectra", S. Vasudevan and A. W. Ghosh, ACS Nano 8, 2111-2117 (2013).
25. “Computing with Nonequilibrium Ratchets”, D. Unluer and A. W. Ghosh, IEEE TNano 12, 330-339 (2013).
26. "Manifestation of Chiral tunneling in tilted graphene pn junction", R. N. Sajjad, S. Sutar, J. Lee and A. W. Ghosh, Phys. Rev. B 86, 155412 (2012), 5 pps 
27. “A quasi-analytical model for energy-delay-reliability tradeoff studies in single barrier, perpendicular STT-RAM cell”, K. Munira, W. H. Butler and A. W. Ghosh, IEEE Transactions on Electron Devices Vol. 59, pp 2221-2226 (2012)
28. “High efficiency switching using graphene based electron optics", R. Sajjad and A. W. Ghosh, Appl. Phys. Lett. Vol. 99, 123101, 4pps (2011).
29. “Monolithically Patterned Wide-Narrow-Wide All-Graphene Devices”, Dincer Unluer, Frank Tseng, Avik W. Ghosh, Mircea R. Stan, IEEE-TNano, 10, 931-939, (2011).
30. “Advances and Future Prospects of STT-RAM”, E. Chen, D. Apalkov, Z. Diao, A. Driskill-Smith, D. Druist, D. Lottis, V. Nikitin, X. Tang, S. Watts, S. Wang, S. A. Wolf, A. W. Ghosh, J. W. Lu, S. J. Poon, M. Stan, W. H. Butler, S. Gupta, C. K. A. Mewes, T. Mewes and P. B. Visscher, IEEE Trans. Magn. 46, 1873-1878 (2010).
31. "Coupling electrical and optical gating for electronic read-out of quantum dot dynamics", S. Vasudevan, K. Walczak and A. W. Ghosh, Phys. Rev. B 82, 085324, 5pps (2010).
32. “Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors”, F. Tseng, D. Unluer, K. Holcomb, M. Stan and A. W. Ghosh, Appl. Phys. Lett. 94, 223112, 3pps (2009).
33. “Extracting phonon thermal conductance across nanoscale junctions: Non-equilibrium Green's function approach compared to semiclassical methods", P. E. Hopkins, P. M. Norris, M. Tsegaye and A. W. Ghosh, Journal of Applied Physics 106, 063503, 10pps (2009).
34. "Controlling transistor threshold voltages using molecular dipoles", S. Vasudevan, N. Kapur, T. He, M. Neurock, J. M. Tour and A. W. Ghosh, J. Appl. Phys. 105, 093703, 4pps (2009).
35. “Reversal of current blockade through multiple trap correlations”, J. Chan, B. Burke, K. Evans, K. A. Williams, S. Vasudevan, M. Liu, J. Campbell and A. W. Ghosh, Physical Review B 80, 033402, 4pps (2009).
36. “The role of Many Particle Excitations in Coulomb Blockaded Transport”, B. Muralidharan, L. Siddiqui and A. W. Ghosh, J. Phys. Cond. Mat. 20, 374109, 13pps (2008).
37. “Rectification by charging -- Contact-induced current asymmetry in Coulomb Blockaded molecules”, O. D. Miller, B. Muralidharan, N. Kapur and A. W. Ghosh, Phys. Rev. B, 77, 125427, 10pps (2008).
38. “Modeling electrostatic and quantum detection of molecules”, S. Vasudevan, K. Walczak, N. Kapur, M. Neurock and A. W. Ghosh, IEEE-Sensors Vol. 8, 857, 4pps (2008).
39. “Impact of structure relaxation on the Performance of small Diameter, n-type <110> Si-Nanowire FETs”, G-C. Liang, D. Kienle, S. Patil, J. Wang, A. W. Ghosh and S. Khare, IEEE-TNano 6, 225, 5pps (2007).
40. “Phonon runaway in nanotube quantum dots”, L. Siddiqui, A. W. Ghosh and S. Datta, Phys. Rev. B 75, 085433, 9pps (2007).
41. “Theory of high bias Coulomb Blockade in ultrashort molecules”, B Muralidharan, A. W. Ghosh, S. K. Pati and S. Datta, IEEE-TNT 6, 536, 9pps (2007).
42. “Conductance in molecular quantum dots – fingerprints of wave-particle duality?”, B. Muralidharan, A. W. Ghosh and S. Datta, Molecular Simulation (Special Issue ed. D. Beratan), 32, 751-758 (2006).
43. “Probing electronic excitations in molecular conduction”, B. Muralidharan, A. W. Ghosh and S. Datta, Phys. Rev. B 73, 155410, 5pps (2006).
44. “Extended Huckel theory for bandstructure, chemistry and transport.  Part II: Silicon”, D. Kienle, K. Bevan, G-C. Liang, L. Siddiqui, J-I. Cerda and A. W. Ghosh, J. Appl. Phys. 100, 043715, 8pps (2006).
45. “Extended Huckel theory for bandstructure, chemistry and transport. Part I: Carbon Nanotubes”, D. Kienle, J-I. Cerda and A. W. Ghosh, J. Appl. Phys. 100, 043714, 9pps (2006).
46. “Atomistic Modeling of Metal-nanotube contacts”, D. Kienle, A. Ghosh and M. Lundstrom, J. Comp. El. 4, 97-100 (2005).
47.  “Generalized effective mass approach for cubic semiconductor n-MOSFETs on arbitrarily oriented wafers”, A. Rahman, A. Ghosh and M. Lundstrom, J. Appl. Phys. 97-100, 053702, 12pps (2005).
48. “A self-consistent transport model for molecular conductors with applications to some real systems”, F. Zahid, M. Paulsson, E. Polizzi, A. W. Ghosh and S. Datta, J. Chem. Phys. 123, 064707, 10pps (2005).
49. “On the validity of the Parabolic Effective-Mass approximation for the current-voltage calculation of silicon nanowire transistors”, J. Wang, A. Rahman, A. Ghosh, G. Klimeck and M. Lundstrom, IEEE Transactions on Electron Devices 52, 1589, 5pps (2005).
50. “Theoretical Investigation of surface roughness scattering in silicon nanowire transistors”, J. Wang, E. Polizzi, A. Ghosh, S. Datta and M. Lundstrom, Appl. Phys. Lett. 87, 043101, 3pps (2005).
51. “Performance evaluation of ballistic nanowire transistors with atomic-basis dispersion relations”, J. Wang, A. Rahman, A. Ghosh, G. Klimeck and M. Lundstrom, Appl. Phys. Lett. 86, 093113, 3pps (2005).
52. “A Quantum Mechanical Approach for the Simulation of Si/SiO2 interface roughness scattering in Silicon Nanowire Transistors”, J. Wang, E. Polizzi, A. Ghosh, S. Datta and M. Lundstrom, J. Comp. El. 4, 453-457 (2005).
53. “Identifying contact effects in electronic conduction through buckyballs on silicon”, G-C. Liang, A. W. Ghosh and S. Datta, Phys. Rev. Lett. 95, 076403, 4pps (2005).
54. “Molecules on silicon: Self-consistent First-Principles Theory and calibration to experiments”, T. Rakshit, G-C. Liang, A. W. Ghosh, M. C. Hersam and S. Datta, Phys. Rev. B 72, 125305, 11pps (2005).
55. “Modeling Challenges in Molecular Electronics on Silicon”, T. Rakshit, G-C. Liang, A. W. Ghosh and S. Datta, J. Comp. El. 4, 83-86 (2005).
56. “Silicon-based molecular electronics”, T. Rakshit, G-C. Liang, A. W. Ghosh and S. Datta, Nano Lett. 4, 1803, 5pps (2004).
57.  “Electrostatic potential profiles of molecular conductors”, G-C. Liang, A. W. Ghosh, M. Paulsson and S. Datta, Phys. Rev. B 69, 115302, 12pps (2004).
58. “Molecular Electronics: Theory and Device prospects”, A. W. Ghosh, P. S. Damle, S. Datta and A. Nitzan, MRS Bull. 29, 391, 5pps (2004) (Special issue on Molecular Transport Junctions).
59. “Charging-induced asymmetry in molecular conductors”, F. Zahid, A. W. Ghosh, M. Paulsson, E. Polizzi and S. Datta, Phys. Rev. B 24, 245317, 5pps (2004).
60. “Gating of molecular transistors: electrostatic and conformational”, A. W. Ghosh, T. Rakshit and S. Datta, Nano Lett. 4, 565, 4pps (2004).
61. “Breaking of general rotational symmetries by multidimensional classical ratchets”, A. W. Ghosh and S. V. Khare, Phys. Rev. E 67, 056110, 11pps (2003).
62. “Molecular conduction: paradigms and possibilities”, A. W. Ghosh and S. Datta, J. Comp. El. 1, 515, 11pps (2002).
63. “First-Principles Analysis of Molecular Conduction Using Quantum Chemistry Software”, P. S. Damle, A. W. Ghosh and S. Datta, Chem. Phys. 281, 171-187 (2002) (Special issue on Molecular Nanoelectronics, Ed. Mark Ratner).
64. “Charge transfer in molecular conductors - oxidation or reduction?”, A. W. Ghosh, F. Zahid, S. Datta and R. Birge, Chem. Phys. 281, 225-230 (2002) (Special issue on Molecular Nanoelectronics, Ed. Mark Ratner).
65. “Unified description of molecular conduction: from molecules to metallic wires”, P. S. Damle, A. W. Ghosh and S. Datta, Phys. Rev. B 64 Rapid Comms., 201403 (R), 4pps (2001).
66. “Temperature dependence of the conductance of multi-walled carbon nanotubes”, E. Graugnard, B. Walsh, A. W. Ghosh, S. Datta, P. J. de Pablo and R. Reifenberger, Phys. Rev. B 64, 125407, 7pps (2001)
67. “Bloch oscillations in the presence of plasmons and phonons”, A. W. Ghosh, L. Jönsson and J. W. Wilkins, Phys. Rev. Lett. 85, 1084, 4pps (2000).
68. “Coupled Bloch-phonon oscillations in GaAs/AlGaAs superlattices: theory and experiment”, T. Dekorsy, A. Bartels, H. Kurz, A. W. Ghosh, L. Jönsson, J. W. Wilkins, K. Kohler, R. Hey and K. Ploog, Physica E 7, 279-284 (2000).
69. “Nonlinear Terahertz response of a one dimensional superlattice,” A. W. Ghosh and J. W. Wilkins, Phys. Rev. B 61, 5423, 8pps (2000).
70. “Rotation in an asymmetric multidimensional potential in the presence of colored noise”, A. W. Ghosh and S. V. Khare, Phys. Rev. Lett. 84, 5243, 4pps (2000).
71. “Third harmonic generation by Bloch oscillating electrons in a quasi-optical array,” A. W. Ghosh, M. C. Wanke, S. J. Allen and J. W. Wilkins, Appl. Phys. Lett. 74, 2164, 3pps (1999).
72. “Reflection of THz radiation by a superlattice,” A. W. Ghosh, A. V. Kuznetsov and J. W. Wilkins, Phys. Rev. Lett.  79, 3494, 4pps (1997).
73.  “Diffusion rate for a Brownian particle in a cosine potential in the presence of colored noise,” A. Ghosh, Phys. Lett. A 187, 54-58 (1994).

B. Books

1. “Nano-electronics, a Molecular View” – World Scientific Series in Nanoscience and Nanotechnology, 2016.
2. “Nanoelectronics – Lecture Notes”, due 2018, in contract with World Scientific

C. Book Chapters

1. “Spin Transfer Torque: A Multiscale Picture”, Y. Xie, K. Munira, I. Rungger, M. T. Stemanova, S. Sanvito and A.W. Ghosh, in review (invited book chapter, ‘Nanomagnetic and Spintronic Devices for Energy Efficient Memory and Computing’, ed. S. Bandyopadhyay and J. Atulasimha, 2016)
2. “Emerging Devices”, S. Bandyopadhyay, M. Cahay and A. W. Ghosh, Chapter 5, pps 59-69 in ‘Electron Devices: An Overview by the Technical Area Committee of the IEEE Electron Devices Society’, Ed. Joachim Burghartz, John Wiley & Sons Ltd, 2013. PROSE award 2013.
3. “Material Issues for efficient Spin-transfer Torque RAMs”, K. Munira, W. A. Soffa and A. W. Ghosh, Chapter 67, pp 849-863, Nanoelectronic Device Applications, CRC Press 2013, ed. James E. Morris, Krzysztof Iniewski.
4.  “Graphene Nanoribbons: From chemistry to circuits”, F. Tseng, D. Unluer, M. R. Stan and A. W. Ghosh, Chapter 18 pages 555-586, ‘Graphene Nanoelectronics: Metrology, Synthesis, Properties and Applications’, Ed. H. Raza (Springer), 2012.
5. “Electronics with Molecules”, A. W. Ghosh, Invited Book Chapter In Bhattacharya P, Fornari R, and Kamimura H (eds) Comprehensive Semiconductor Science and Technology, vol. 5, pp. 383-479 (2011), Amsterdam: Elsevier.
6. “Nanoscale device modeling”, P. S. Damle, A. W. Ghosh and S. Datta, Book chapter in “Molecular Nanoelectronics”, 21pps, Ed. Mark Reed and Takhee Lee, American Scientific Publishers, 2003.

D. Conference Publications

1. “Current saturation and steep switching in graphene PN junctions using angle-dependent scattering”, M. M. Elahi and A. W. Ghosh, 74th Device Research Conference, Delaware 2016.
2. “First principles study of twisted bilayer MoS2 through band unfolding”, Y. Tan and A. W. Ghosh, 74th Device Research Conference, Delaware 2016.
3. “Fokker-Planck simulation of stochastic write error in spin torque switching with thermal noise”, Y. Xie, B. Behin-Aien and A. W. Ghosh, 74th Device Research Conference, Delaware 2016.
4. "A quantum mechanics inspired simulation platform for nanoscale devices", Redwan N. Sajjad, K. M. Masum Habib, Avik Ghosh, SRC TECHCON, Austin, 2014. 
5. “Conductance of graphene: role of metal contact, charge puddles and differential gating”, Redwan N. Sajjad, Frank Tseng, Avik Ghosh, 72st Device Research Conference, Santa Barbara, 2014.
6. “Novel switching mechanism through angle dependent transmission in graphene pn junction”, Redwan N. Sajjad, Avik Ghosh, 71st Device Research Conference, Notre Dame, 2013. 
7. "Novel switching mechanism with graphene pn junctions: device physics and circuit analysis", Redwan N. Sajjad, Chenyun Pan, Azad Naeemi, Avik Ghosh, SRC TECHCON, Ausin, 2013.
8. “Balancing stress & dipolar interactions for fast, low power, reliable switching in multiferroic logic”, K. Munira, S. Nadri, M. Forgues, A. W. Ghosh, Device Research Conference, 67-68, 2012.
9. “Modeling and visualizing electrons in graphene”, Redwan N. Sajjad, F. Tseng, Avik Ghosh, 15th International Workshop on Computational Electronics (IWCE), Madison, 2012.
10. “Graphene electronics and electron optics: quantum transport and device opportunities”, Redwan N. Sajjad, F. Tseng, D. Unluer, Avik Ghosh, Graphene International Conference, Belgium, 2012.
11. “Thermal Impedance Matching at Nanoscale Material Interfaces”, C. A. Polanco, C. B. Saltonstall, P. E. Hopkins, P. M. Norris and A. W. Ghosh,
    ASME Summer Heat Transfer Conference, 2012
12. “Tunable transmission gap in graphene p-n junction”, Redwan N. Sajjad and Avik Ghosh, International Semiconductor Device Research Symposium (ISDRS), Maryland, 2011.
13. “Comparative material issues for fast reliable switching in STT-RAMs”, K. Munira, W.A. Soffa, A.W. Ghosh, 11th IEEE Conference on Nanotechnology (IEEE-NANO), pp.1403-1408, Aug. 2011.
14. “Molecular Spectroscopy from current fluctuations”, S. Vasudevan, T. W. Chan, K. Williams and A. W. Ghosh, Villa Conference on Interaction among Nanostructures, 2010, Santorini, Greece.
15. “A molecular description of current flow”, A. W. Ghosh, K. Munira and M. Tsegaye, NanoTurkey 2010.
16. “Beyond CMOS switching paradigms”, L. Li, D. Unluer, M. R. Stan and A. W. Ghosh, IEEE-Nano 2010, South Korea.
17. “Self-consistent Parametrized Physical MTJ Compact Model for STT-RAM”, A. Nigam, K. Munira, A. Ghosh, S. Wolf, E. Chen and M. R. Stan, CAS 2010.
18. “Model based study on performance and energy optimization for STT-RAM”, A. Nigam, K. Munira, A. W. Ghosh, S. Wolf and M. R. Stan, Non Volatile Memory Workshop 2010.
19. “Graphene Devices, Interconnect and Circuits -- Challenges and Opportunities”, Mircea R. Stan, Dincer Unluer, Avik Ghosh and Frank Tseng, ISCAS 2009.
20.  “Assumptions of local equilibrium in thermal boundary conductance calculations”, P. E. Hopkins, M. S. Tsegaye, P. M. Norris and A. Ghosh, Proceedings of MNHT2008: 2008 ASME Micro/Nanoscale Heat Transfer International Conference, Tainan, Taiwan. 
21. “Are short molecules quantum dot arrays” – B. Muralidharan, A. W. Ghosh, S. K. Pati, S. Datta, 6th IEEE Conference on Nanotechnology, 2006, pages 419-421.
22.  “Using trap-assisted tunneling for molecular sensing?”, A. W. Ghosh, Best Paper Award at ISSSR 2006 for Frontier Sensing and Monitoring.
23. “Molecular elements on silicon substrates: modeling issues and device prospects”
    A. W. Ghosh, G. C. Liang, T. Rakshit, D. Kienle and S. Datta, 4th IEEE Conference on Nanotechnology, 2004, pages 276.
24. “Effective Mass Approach for n-MOSFETs on arbitrarily oriented wafers”, A. Rahman, M. Lundstrom and A. W. Ghosh, 10th International Workshop on Computational Electronics, IWCE-10, 2004, pages 177-178.
25. “Huckel I-V 3.0: a self-consistent model for molecular transport and its applications”, F. Zahid, M. Paulsson, E. Polizzi, A. W. Ghosh, L. Siddiqui and S. Datta, 10th International Workshop on Computational Electronics, IWCE-10, 2004, pages 102
26. “Assessment of Ge n-MOSFETs by quantum simulation”, A. Rahman, A. Ghosh and M. Lundstrom, IEDM Tech. Dig. p. 19.4, 4pps (2003).
27. “Coupled Bloch-phonon modes in superlattices”, A. W. Ghosh, L. Jonsson, J. W. Wilkins, T. Dekorsy, A. Bartels, H. Kurz, K. Kohler, R. Hey and K. Ploog, 2001 Quantum Electronics and Laser Science Conference (QELS ’01), pages 150-151.